The present work is an investigation of the chemical
composition and growth profile of an hydrogenated amorphous carbon nitride
film (a-CN:H) deposited by atmospheric pressure Townsend discharge in
C2H4/N2. Various surface characterization techniques were
used to evaluate the coatings properties (X-ray Photoelectron Spectroscopy,
Fourier Transform Infrared Spectroscopy, Profilometry, Scanning Electron
Microscopy). The coating obtained presented a high N/C ratio and a high
concentration of N-functionalities. The results revealed two different
growth mechanisms depending on the residence time of the precursor
molecules; at first, the growth is mainly due to radicals then a powder
formation mechanism appears, therefore leading to different chemical
composition and surface properties.